Schottky diode yog cov khoom siv hlau semiconductor ua los ntawm cov hlau tsis zoo (kub, nyiaj, txhuas, platinum, thiab lwm yam) ua ib qho zoo electrode, n-hom semiconductor B raws li qhov tsis zoo electrode, thiab muaj peev xwm cuam tshuam rau ntawm qhov chaw ntawm kev sib cuag. ob leeg muaj cov yam ntxwv rectification. Txij li thaum muaj ib tug loj tus naj npawb ntawm electrons nyob rau hauv lub n-hom semiconductor thiab tsuas yog ib tug me me ntawm dawb electrons nyob rau hauv noble hlau, cov electrons diffuse los ntawm high concentration B mus rau qhov tsawg concentration a. Obviously, tsis muaj qhov nyob rau hauv cov hlau a, yog li tsis muaj qhov diffusion txav ntawm qhov ntawm a mus rau B. Nrog rau qhov txuas ntxiv ntawm electrons los ntawm B mus rau a, cov electron concentration ntawm B maj mam txo, thiab cov electronegativity nto yog puas lawm. Yog li, lub peev xwm thaiv tau tsim, thiab cov kev taw qhia hluav taws xob yog B → a. Txawm li cas los xij, nyob rau hauv qhov kev txiav txim ntawm qhov hluav taws xob no, cov hluav taws xob hauv ib qho tseem yuav tsim kom muaj kev txav txav los ntawm a mus rau B, yog li ua rau cov hluav taws xob tsis muaj zog uas tsim los ntawm kev txav mus los. Thaum lub cheeb tsam them nqi nrog ib qhov dav yog tsim, lub electron drift txav los ntawm hluav taws xob teb thiab electron diffusion txav los ntawm qhov sib txawv concentrations ncav cuag tus txheeb ze sib npaug, thiab Schottky barrier yog tsim.
Cov qauv hluav taws xob sab hauv ntawm Schottky rectifier yog ua raws li n-hom semiconductor, uas ib txheej n-epitaxial nrog arsenic li dopant yog tsim. Lub anode yog ua los ntawm molybdenum los yog txhuas raws li txheej thaiv. Silicon dioxide (SiO2) yog siv los tshem tawm cov hluav taws xob hauv cheeb tsam ntug thiab txhim kho cov nqi hluav taws xob ntawm lub raj. N-hom substrate muaj qhov me me ntawm lub xeev tsis kam thiab nws cov doping concentration yog 100 feem pua siab dua li ntawm H-txheej. Ib txheej N ntxiv cathode yog tsim nyob rau hauv lub substrate kom txo tau qhov kev tiv thaiv ntawm lub cathode. Los ntawm kev kho cov txheej txheem tsis zoo, Schottky barrier yog tsim los ntawm n-hom substrate thiab anode hlau, raws li qhia nyob rau hauv daim duab 1. Thaum ib tug pem hauv ntej bias yog siv rau ob qho tag nrho ntawm Schottky barrier (lub anode hlau yog txuas nrog lub zoo electrode ntawm lub hwj chim mov, thiab n-hom substrate txuas nrog rau qhov tsis zoo electrode ntawm lub hwj chim mov), lub Schottky barrier txheej yuav nqaim thiab nws sab hauv kuj ua me me; Ntawm qhov tsis sib xws, yog tias qhov kev tsis ncaj ncees rov qab siv rau ob qho kawg ntawm Schottky barrier, Schottky barrier txheej yuav dav dua thiab nws cov kev tiv thaiv sab hauv yuav loj dua.
Yuav kom suav tau, cov qauv thiab cov hauv paus ntsiab lus ntawm Schottky rectifiers txawv heev ntawm PN junction rectifiers. Feem ntau, PN junction rectifiers hu ua junction rectifiers, thaum hlau ib nrab raj rectifiers hu ua Schottky rectifiers. Txhuas Silicon Schottky diodes tsim los ntawm silicon planar technology kuj tau tsim. Qhov no tuaj yeem tsis tsuas yog txuag cov khoom muaj txiaj ntsig zoo, txo cov nqi, tab sis kuj txhim kho qhov sib xws ntawm qhov tsis sib xws.
