Introduction to fast recovery diode

Fast recovery diodes are also commonly represented by graphical symbols of common diodes, and are distinguished by text description or model. The fast recovery diode is similar to the common diode, but the manufacturing process is different from the common transistor. The doping concentration near the PN junction is very low to obtain a higher switching speed and a lower forward voltage drop. Its reverse recovery time is 200 ~ 750 ns and its high speed can reach 10 ns. Compared with Schottky diode, its withstand voltage is much higher. It is mainly used as a high-speed rectifying element and as a rectifying transistor in switching power supply and inverter power supply to reduce off loss, improve efficiency and reduce noise.